Journal
JOURNAL OF CRYSTAL GROWTH
Volume 454, Issue -, Pages 19-24Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.08.051
Keywords
Defects; Stresses; Metalorganic chemical vapor deposition; Selective epitaxy; Semiconducting III-V materials; Semiconducting gallium arsenide
Funding
- Research Grants Council of Hong Kong [614312, 16212115]
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We report three dimensional (3D) disk-shaped GaAs crystals on V-groove patterned (001) Si substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with triangular cross-sections were grown inside Si V-grooves by nano-scale selective heteroepitaxy. These nanowires were then partially confined in micro-sized SiO2 cavities and coalesced into uniform arrays of 3D crystals. Scanning electron microscope and atomic force microscopy inspection showed the absence of antiphase-domains and smooth top surface morphology. Superior structural and optical properties over GaAs thin films on planar Si were also demonstrated. More remarkably, by growing the 3D crystals on V-grooved Si, we were able to overcome the residual tensile stress induced by the thermal mismatch between GaAs and Si. Strain free GaAs was uncovered in the crystals with a dimension of 3 x 3 mu m(2). (C) 2016 Elsevier B.V. All rights reserved.
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