Journal
JOURNAL OF CRYSTAL GROWTH
Volume 453, Issue -, Pages 124-129Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.08.027
Keywords
Surface structure; Molecular beam epitaxy; Tellurides; Topological crystalline insulators
Funding
- Japan Society for the Promotion of Science
- Grants-in-Aid for Scientific Research [26870086, 16H00983] Funding Source: KAKEN
Ask authors/readers for more resources
We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF2 which has been conventionally used as a substrate. By optimizing temperatures for the growth of both SnTe and CdTe layers and the SnTe growth rate, we could obtain SnTe layers of the single phase grown only in the (111) orientation and of much improved surface morphology from the viewpoint of the extension and the flatness of flat regions, compared to the layers grown on BaF2. In this optimal growth condition, we have also achieved a low hole density of the order of 10(17) cm(-3) at 4 K, the lowest value ever reported for SnTe thin films without additional doping. In the magnetoresistance measurement on this optimized SnTe layer, we observe characteristic negative magneto-conductance which is attributed to the weak antilocalization effect of the two-dimensional transport in the topological surface state. (C) 2016 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available