X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Published 2016 View Full Article

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Title
X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates
Authors
Keywords
A1. Heteroepitaxy, A1. X-ray diffraction, A2. Molecular beam epitaxy, B1. Antimonides, B1. Silicon substrate, B2. Semiconducting III–V materials
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 439, Issue -, Pages 33-39
Publisher
Elsevier BV
Online
2016-01-16
DOI
10.1016/j.jcrysgro.2016.01.005

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