Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×10 6 cm 2 /V s in AlGaAs/GaAs quantum wells grown by MBE
Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×10 6 cm 2 /V s in AlGaAs/GaAs quantum wells grown by MBE
Authors
Keywords
A1. Electron mobility, A3. Molecular beam epitaxy (MBE), A3. Quantum wells, Gallium arsenide, Two dimensional electron gas (2DEG)
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