Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×10 6 cm 2 /V s in AlGaAs/GaAs quantum wells grown by MBE

Title
Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×10 6 cm 2 /V s in AlGaAs/GaAs quantum wells grown by MBE
Authors
Keywords
A1. Electron mobility, A3. Molecular beam epitaxy (MBE), A3. Quantum wells, Gallium arsenide, Two dimensional electron gas (2DEG)
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 441, Issue -, Pages 71-77
Publisher
Elsevier BV
Online
2016-02-14
DOI
10.1016/j.jcrysgro.2016.02.010

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