Journal
JOURNAL OF CRYSTAL GROWTH
Volume 443, Issue -, Pages 50-53Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2016.03.025
Keywords
Defects; Surface structure; Laser epitaxy; Oxides; Perovskites; Dielectric materials
Funding
- NSF [DMR-1245000]
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We study the structure and surface morphology of the 100 nm homoepitaxial LaAlO3 films grown by pulsed laser deposition in a broad range of growth parameters. We show that there is a narrow window of growth conditions in which the stoichiometric, bulk-like structure is obtained while maintaining a 2-dimensional (2D) layer-by-layer growth mode. In our system, these optimum growth conditions are 100 mTorr background pressure with laser energy density 1.5-2 J/cm(2). The sensitivity to growth conditions of the stoichiometry and structure of LaAlO3 films can have a crucial role in the 2-D electron gas formed at the LaAlO3/SrTiO3 interface. (C) 2016 Elsevier B.V. All rights reserved.
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