Journal
EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
Volume 2022, Issue 24, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ejic.202200161
Keywords
Gallium; Indium; Precursors; Triazenides; Volatile
Categories
Funding
- Swedish foundation for Strategic Research [SSF-RMA 15-0018]
- Knut and Alice Wallenberg foundation [KAW 2013.0049]
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This study reports a new series of precursors for indium and gallium nitride with volatile and thermally stable properties, which can be tailored by choosing different substituents.
Indium and gallium nitride are important semi-conductor materials with desirable properties for high-frequency and power electronics. We have previously demonstrated high-quality ALD grown InN and GaN using the hexacoordinated 1,3-diisopropyltriazenide In(III) and Ga(III) precursors. Herein we report the structural and thermal properties their analogues employing combinations of isopropyl, sec-butyl and tert-butyltriazenide alkyl groups on the exocyclic nitrogen of the triazenide ligand. The new triazenide compounds were all found to be volatile (80-120 degrees C, 0.5 mbar) and showed very good thermal stability (200 and 300 degrees C). These new triazenide analogues provide a set of precursors whose thermal properties are determined and can be accordingly tailored by strategic choice of exocyclic nitrogen alkyl substituents.
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