Journal
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
Volume 48, Issue 5, Pages 561-579Publisher
TAYLOR & FRANCIS INC
DOI: 10.1080/10408436.2022.2083579
Keywords
HfO2-based ferroelectrics; 2D ferroelectrics; transistors; memristors; memories; critical reliability issues
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This review aims to provide an overview of emerging nanoscale ferroelectrics, evaluate their integration in the most promising devices, and critically analyze the detrimental effects of nanoscale ferroelectrics on device performance while outlining prospects to alleviate these adverse effects.
Following the initial report on ferroelectricity in hafnia (HfO2) more than a decade ago, the researchers' interest in this intriguing material system has constantly increased due to the promise it holds for future applications. Currently, there is an unbalanced situation, where an overwhelming majority of studies focus on either nanoscale characterization or on tuning the growth conditions in view of improving the properties of HfO2, but only few applications of this material system are being investigated. The goal of this review is to provide an overview of all emerging nanoscale ferroelectrics, to review their integration in most promising devices and to provide a critical analysis addressing the detrimental physical effects of nanoscale ferroelectrics on the performance of devices while outlining the perspectives to alleviate these adverse effects.
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