Journal
APPLIED SURFACE SCIENCE
Volume 591, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2022.153087
Keywords
Helium ion implantation; Copper oxidation; Copper oxide nanostructure
Categories
Funding
- JSPS KAKENHI [JP19K22035, JP19H00799]
- Project for Promoting Public Utilization of Advanced Research Infrastructure (Program for Supporting Introduction of the New Sharing System) [JPMXS0420100519]
- Nanotechnology Platform program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT) , Japan
- Chi-nese Scholarship Council
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This study investigated the influence of He+ implantation on the oxidation behavior of copper. The results showed that He+ implantation accelerated the formation of copper oxide and homogenized its distribution on the copper substrate. These findings provide important insights into the oxidation and corrosion behavior of copper in alkaline conditions, as well as the design and growth of copper oxide nanostructures by ion implantation.
Manipulating Cu oxidation is important for Cu anti-oxidation techniques and Cu oxide fabrication. In this study, Cu oxidation behavior after He+ implantation was observed after exposure to 0.1 M aqueous NaOH, and the underlying microstructural evolution and mechanism were investigated. He+ implantation and some C concomitantly introduced into the Cu surface accelerated formation of a thin oxide layer during the initial oxidation period, resulting in faster initial generation and more rapid growth of CuO during the subsequent oxidation. Furthermore, He+ implantation homogenized the distribution of CuO on the Cu substrate. Our findings will increase researchers' understanding of the oxidation and corrosion behavior of Cu in aqueous alkaline conditions, and provide new insights into designing and growing Cu oxide nanostructures by ion implantation.
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