4.5 Article

Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN

Journal

APPLIED PHYSICS EXPRESS
Volume 15, Issue 8, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac8048

Keywords

ferroelectricity; thin film; gallium nitride; scandium; sputtering

Funding

  1. project Element Strategy Initiative to Form a Core Research Center of MEXT [JPMXP0112101001]
  2. Japan Society for the Promotion of Science (JSPS) KAKENHI [21H01617, 22K18307]
  3. JST, PRESTO, Japan [JPMJPR20B3]

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The ferroelectricity of wurtzite ScxGa1-xN was demonstrated, with high remanent polarization and adjustable coercive field. The concentration of Sc governed the coercive field in ScxGa1-xN and ScxAl1-xN, suggesting the polarization switching started in wurtzite unit cells containing Sc.
The ferroelectricity of wurtzite, Sc x Ga1-x N (x = 0.35-0.44), was demonstrated in a metal-ferroelectric-metal capacitor. The remanent polarization (P (r)) obtained from positive-up negative-down measurements was high, exceeding 120 mu C cm(-2). The coercive field (E (c)) of Sc0.44Ga0.56N was approximately 3.6 MV cm(-1) at 300 K, which decreased to 3 MV cm(-1) at 473 K. We observed that regardless of the host material, the Sc concentration governed the E (c) value in Sc x Ga1-x N and Sc x Al1-x N, suggesting that the polarization switching started in the wurtzite unit cells containing Sc. Additionally, the E (c) of Sc x Ga1-x N was lower than that of Sc x Al1-x N when P (r) was equivalent.

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