Ultrafast and Polarization-Sensitive ReS2/ReSe2 Heterostructure Photodetectors with Ambipolar Photoresponse

Recently, two-dimensional (2D) van der Waals (vdWs) heterostructures provided excellent and fascinating platforms for advanced engineering in high-performance optoelectronic devices. Herein, novel ReS2/ReSe2 heterojunction phototransistors are constructed and explored systematically that display high responsivity, wavelength-dependent ambipolar photoresponse (negative and positive), ultrafast and polarization-sensitive detection capability. This photodetector exhibits a positive photoresponse from UV to visible spectrum (760 nm) with high photoresponsivities about 126.56 and 16.24 A/W under 350 and 638 nm light illumination, respectively, with a negative photoresponse over 760 nm, which is mainly ascribed to the ambipolar photoresponse modulated by gate voltage. In addition, profound linear polarization sensitivity is demonstrated with a dichroic ratio of about similar to 1.2 at 638 nm and up to similar to 2.0 at 980 nm, primarily owing to the wavelength-dependent absorption anisotropy and the stagger alignment of the crystal. Beyond static photodetection, the dynamic photoresponse of this vdWs device presents an ultrafast and repeatable photoswitching performance with a cutoff frequency (f(3dB)) exceeding 100 kHz. Overall, this study reveals the great potential of 2D ReX2-based vdWs heterostructures for high-performance, ultrafast, and polarization-sensitive broadband photo detectors.

Automated summary

In this study, novel ReS2/ReSe2 heterojunction phototransistors were systematically constructed and explored. These devices exhibited high responsivity, wavelength-dependent ambipolar photoresponse, polarization sensitivity, and ultrafast photoresponse.