4.8 Article

Photoluminescence Enhancement by Band Alignment Engineering In MoS2/FePS3 van der Waals Heterostructures

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 29, Pages 33482-33490

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c05464

Keywords

van der Waals heterostructures; transition metal dichalcogenide monolayers; enhanced photoluminescence; band alignment engineering; optoelectronic tunability

Funding

  1. Generalitat Valenciana [IDIFEDER/2020/005, IDIFEDER/2018/061, APOSTD/2020/249]
  2. Plan Gen-T of Excellence [CDEIGENT/2019/022, CIDEGENT/2018/005, Cide-GenT2018004]
  3. Spanish MCINN [PLASTOP PID2020-119124RB-I00, 2D-HETEROS PID2020-117152RB-100, CEX2019-000919-M]
  4. European Union [ERC-2021-StG-101042680 2D-SMARTiES, ERC AdG Mol-2D 788222]

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This study investigates the photoluminescence properties of a stacked structure of single-layer MoS2 and van der Waals FePS3. The results demonstrate the outstanding performance of this heterostructure in terms of energy band alignment and charge transfer, providing potential for rational design of van der Waals heterostructures with advanced optoelectronic properties.
Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to t h e environment and the chemical potential of the material. Howe v e r , a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor t h e nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS(2 )against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.

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