Journal
ACS ENERGY LETTERS
Volume 7, Issue 6, Pages 1987-1993Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.2c00780
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Funding
- KAUST [OSR-CARF/CCF-3079, OSR-CRG2019-4093, IED OSR-2019-4208]
- Aramco [RGC/3/4556-01-01]
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- Solar Energy Technology Office within the US DOE Energy Efficiency and Renewable Energy [SETP DE-EE00038266]
- National Science Foundation [OIA-1929131, DMR-1905734]
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The photoactivated p-doping of hole-transporting material has been used to enhance hole extraction in solution-processed organic semiconductor layers, leading to improved performance and stability of optoelectronic devices.
Solution-processed organic semiconductor layers on rough surfaces tend to vary widely in thickness, significantly hindering charge extraction in relevant optoelectronic devices. Herein, we report the photoactivated p-doping of hole-transporting material (HTM) to enhance hole extraction for (textured) perovskite/silicon tandem solar cells, making the device performance less sensitive to the variation of hole transport layer thickness. We used the ionic compound 4-isopropyl-4'-methyldiphenyliodonium tetrakis(penta-fluorophenyl-borate) (DPI-TPFB) as a p-type dopant in poly(triaryl amine) (PTAA), which we used as the HTM. We observed that light soaking DPI-TPFB-doped PTAA shows approximately 22 times higher conductivity compared with an undoped PTAA film, which translated into an improved fill factor (FF) for tandem solar cells. Our tandem solar cells achieved an similar to 80% FF and 27.8% efficiency and operated at their maximum power point for 200 h without loss of performance, in addition to retaining similar to 83% of initial performance over a month of operation in an outdoor environment.
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