Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing

Here, various synaptic functions and neural network simulation based pattern-recognition using novel, solution-processed organic memtransistors (memTs) with an unconventional redox-gating mechanism are demonstrated. Our synaptic memT device using conjugated polymer thin-film and redox-active solid electrolyte as the gate dielectric can be routinely operated at gate voltages (V-GS) below - 1.5 V, subthreshold-swings (S) smaller than 120 mV/dec, and ON/OFF current ratio larger than 10(8). Large hysteresis in transfer curves depicts the signature of non-volatile resistive switching (RS) property with ON/OFF ratio as high as 10(5). In addition, our memT device also shows many synaptic functions, including the availability of many conducting-states (> 500) that are used for efficient pattern recognition using the simplest neural network simulation model with training and test accuracy higher than 90%. Overall, the presented approach opens a new and promising way to fabricate high-performance artificial synapses and their arrays for the implementation of hardware-oriented neural network.

Automated summary

This study demonstrates various synaptic functions and pattern recognition based on neural network simulation, using novel organic memtransistors. The memT devices have low gate voltages, small subthreshold swings, and high ON/OFF current ratios. They also exhibit non-volatile resistive switching properties and multiple conducting states, allowing for efficient pattern recognition.