Journal
SCIENCE
Volume 376, Issue 6593, Pages 648-+Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abm8642
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Funding
- Berkeley Center for Negative Capacitance Transistors (BCNCT)
- Applications and Systems-Driven Center for Energy-Efficient Integrated NanoTechnologies (ASCENT)
- Defense Advanced Research Projects Agency (DARPA)
- DARPA Foundations Required for Novel Compute (FRANC) program
- Department of Defense
- US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC0205-CH11231]
- DOE Office of Science [AC02-06CH11357]
- DOE, Office of Science, Basic Energy Sciences [DE-SC-0012375]
- DOE, Office of Science, Office of Basic Energy Sciences [DE-AC0276SF00515, DE-AC02-05CH11231]
- DOE Office of Science User Facility [DE-AC02-05CH11231]
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This study reports on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in ultrathin ZrO2 films. The research explores the unconventional ferroelectric size effects in three-dimensional centrosymmetric materials deposited at the two-dimensional thickness limit, offering promising applications for electronics.
The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide (ZrO2) thin films on silicon. The emergent ferroelectricity and hysteretic polarization switching in ultrathin ZrO2, conventionally a paraelectric material, notably persists down to a film thickness of 5 angstroms, the fluorite-structure unit-cell size. This approach to exploit three-dimensional centrosymmetric materials deposited down to the two-dimensional thickness limit, particularly within this model fluorite-structure system that possesses unconventional ferroelectric size effects, offers substantial promise for electronics, demonstrated by proof-of-principle atomic-scale nonvolatile ferroelectric memory on silicon. Additionally, it is also indicative of hidden electronic phenomena that are achievable across a wide class of simple binary materials.
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