Article
Physics, Applied
Jianping Wang, Fangyuan Shi, Xingzhi Wu, Junyi Yang, Yongqiang Chen, Quanying Wu, Yinglin Song, Yu Fang
Summary: The effect of Fe defects on carrier recombination and two-photon induced ultrafast exciton dynamics in GaN crystals was investigated using femtosecond transient absorption spectroscopy. The absorption kinetics exhibited different characteristics under different nonequilibrium carrier concentrations and distributions. The findings are crucial for the applications of GaN in ultrafast optoelectronics and integrated nonlinear optics.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Yu Fang, Xingzhi Wu, Junyi Yang, Jianping Wang, Quanying Wu, Yinglin Song
Summary: The impact of carbon defects on carrier trapping and recombination processes in high-quality GaN crystals was investigated using transient absorption spectroscopy, revealing that even at low defect concentrations, carbon in GaN significantly reduces the efficiency of optoelectronic devices.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Namitha Anna Koshi, Dharmapura H. K. Murthy, Sudip Chakraborty, Seung-Cheol Lee, Satadeep Bhattacharjee
Summary: Strontium titanate is widely used as a promising photocatalyst, and the enhancement of its photocatalytic activity can be achieved through the effective control of oxygen vacancy states. Substitutional doping with p-block elements like Aluminum can decrease charge trapping states in SrTiO3 and improve photocatalytic efficiency.
ACS APPLIED ENERGY MATERIALS
(2022)
Article
Chemistry, Physical
Namitha Anna Koshi, Dharmapura H. K. Murthy, Sudip Chakraborty, Seung-Cheol Lee, Satadeep Bhattacharjee
Summary: Strontium titanate is widely used as a promising photocatalyst due to its unique band edge alignment. Enhancing the photocatalytic activity through the control of oxygen vacancy states and doping with p-block elements like aluminum can reduce charge trapping states in SrTiO3. Calculations based on density functional theory have shown the synergistic effect of doping with aluminum and iridium in improving the photocatalytic efficiency of SrTiO3.
ACS APPLIED ENERGY MATERIALS
(2022)
Article
Chemistry, Physical
In-Hwan Lee, Tae-Hwan Kim, A. Y. Polyakov, A. V. Chernykh, M. L. Skorikov, E. B. Yakimov, L. A. Alexanyan, I. V. Shchemerov, A. A. Vasilev, S. J. Pearton
Summary: In this study, a matrix of blue GaN/InGaN multi-quantum-well micro-LEDs was prepared and characterized. The changes in photoluminescence and microcathodoluminescence spectra were found to be related to the formation of deep hole traps and electron traps in the sidewalls of the micro-LEDs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Xian Wang, Dayujia Huo, Xin Wang, Minjie Li, Yong Wang, Yan Wan
Summary: The photophysical properties of surface passivated CsPbI3 perovskite were investigated using transient absorption spectroscopy. The results showed that surface passivation slowed down carrier trapping and accelerated bimolecular recombination, leading to improved carrier transport and longer hot carrier lifetime. Defect passivation was found beneficial for enhancing defect tolerance and slowing down hot carrier cooling in developing high-performance photovoltaics.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Ankit Udai, Anthony Aiello, Tarni Aggarwal, Dipankar Saha, Pallab Bhattacharya
Summary: This study investigated the femtosecond carrier and photon dynamics in self-organized In0.27Ga0.73N/GaN QDs grown by molecular beam epitaxy. The unique phenomenon in the dynamics is attributed to the contrast in carrier density caused by the different effective masses of carriers.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Applied
Meng-meng Gao, Liu-yan Fan, Xiao-ye Gong, Jing-lin You, Zhi-zhan Chen
Summary: The photoexcited carrier dynamics of high-purity (HPSI) and vanadium-doped semi-insulating (VDSI) 4H-SiC irradiated by lasers with different wavelengths and powers were investigated. It was found that the longitudinal optical (LO) peaks of HPSI and VDSI did not shift with laser power variations when a 532-nm laser was used, due to a low concentration of photoexcited carriers. However, when a 355-nm laser was adapted, the relationship between the photoexcited carrier concentrations and the laser power was found to be nonlinear because of the dominance of trap-assisted Auger (TAA) recombination.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Optics
T. N. Nurakhmetov, Zh. M. Salikhodzha, A. M. Zhunusbekov, A. Zh. Kainarbay, D. H. Daurenbekov, T. T. Alibay, B. M. Sadykova, K. B. Zhangylyssov, B. N. Yussupbekova, D. A. Tolekov
Summary: In Na2SO4, intrinsic emission occurs during the recombination of electrons from the s state of the conduction band with non-equivalent holes SO4-. Using vacuum-ultraviolet and thermoactivation spectroscopy, electronic transitions from the valence band to the conduction band were identified in the study.
Article
Multidisciplinary Sciences
Bo Wu, Weihua Ning, Qiang Xu, Manukumara Manjappa, Minjun Feng, Senyun Ye, Jianhui Fu, Stener Lie, Tingting Yin, Feng Wang, Teck Wee Goh, Padinhare Cholakkal Harikesh, Yong Kang Eugene Tay, Ze Xiang Shen, Fuqiang Huang, Ranjan Singh, Guofu Zhou, Feng Gao, Tze Chien Sum
Summary: Bismuth-based double perovskite Cs2AgBiBr6, despite being considered a potential candidate for high-stability perovskite solar cells, exhibits poor performance due to the strong self-trapping effect, resulting in limitations for its application in photovoltaics.
Article
Physics, Applied
Xiao-Yi Liu, Wei-Ping Li, Yu Cui, Shao-Juan Li, Ran-Bo Yang, Zhi-Qing Li, Zi-Wu Wang
Summary: The migration motion of defects in metal halide perovskites' quantum dots results in complex charge-carrier trapping. We study two-step trapping processes mediated by mobile defects and find that they are much faster than direct trapping, suggesting their crucial role in non-radiative recombination losses. These results provide an explanation for recent experiments and can be used to analyze key performance-related defects in electronic devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Physical
Bhagyashree Mahesha Sachith, Takuya Okamoto, Sushant Ghimire, Tomokazu Umeyama, Yuta Takano, Hiroshi Imahori, Vasudevanpillai Biju
Summary: This study reveals the distance-dependent and diffusion-controlled interfacial electron transfer across perovskite-electron acceptor heterojunction films. Perovskite nanocrystals exhibit long-range carrier migration in self-assembled films, while acceptors quench photoluminescence intensity without affecting lifetime. The research underscores the importance of interfacial electron transfer in perovskite films.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Physics, Applied
Ebrahim Najafi, Amir Jafari, Bolin Liao
Summary: This study demonstrates that the transport of hot carriers in a highly excited semiconductor slows down and becomes an oscillatory process, attributed to the spatial separation of photo-excited electrons and holes under intrinsic and photo-induced electric fields. The research introduces a transport model that mimics the experimental observations, offering new insights into the dynamics of hot carriers in space and time.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Soumya Mukherjee, Anjan Kumar Nm, Ayan Mondal, Venkataramanan Mahalingam, N. Kamaraju
Summary: This study investigates the excited carrier dynamics of MoSe2 nanosheets through non-degenerate pump-probe differential transmission measurements. The results reveal that the trapping and absorption of excitons occur with time constants of approximately 430 to 500 fs, while the recombination of excitons happens through two decay channels with time constants of approximately 25 to 55 ps and greater than or similar to 1 ns. The rate of exciton-exciton annihilation is estimated to be in the range of 10-8 to 10-8 cm(3)s(-1).
JOURNAL OF CHEMICAL PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Christian Tantardini, Sebastian Kokott, Xavier Gonze, Sergey Levchenko, Wissam A. Saidi
Summary: In this study, the stability of small polarons in methylammonium lead iodide perovskite is investigated using density functional theory. It is found that the electron small polaron is unstable, while the hole small polaron is metastable at realistic operation temperatures. The hole polaron, with its close proximity to the conduction band and metastability, is expected to have a significant impact on charge-carrier recombination.
APPLIED MATERIALS TODAY
(2022)
Review
Nanoscience & Nanotechnology
J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, J. A. Simmons
ADVANCED ELECTRONIC MATERIALS
(2018)
Article
Physics, Applied
A. K. Singh, K. P. O'Donnell, P. R. Edwards, K. Lorenz, J. H. Leach, M. Bockowski
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2018)
Article
Nanoscience & Nanotechnology
Natalie Briggs, Maria Isolina Preciado, Yanfu Lu, Ke Wang, Jacob Leach, Xufan Li, Kai Xiao, Shruti Subramanian, Baoming Wang, Aman Haque, Susan Sinnott, Joshua A. Robinson
Review
Chemistry, Physical
Paul R. Edwards, Kevin P. O'Donnell, Akhilesh K. Singh, Douglas Cameron, Katharina Lorenz, Mitsuo Yamaga, Jacob H. Leach, Menno J. Kappers, Michal Bockowski
Article
Materials Science, Multidisciplinary
Qiye Zheng, Chunhua Li, Akash Rai, Jacob H. Leach, David A. Broido, David G. Cahill
PHYSICAL REVIEW MATERIALS
(2019)
Article
Physics, Condensed Matter
U. R. Sunay, M. E. Zvanut, J. Marbey, S. Hill, J. H. Leach, K. Udwary
JOURNAL OF PHYSICS-CONDENSED MATTER
(2019)
Article
Physics, Applied
Patrik Scajev, Kestutis Jarasiunas, Jacob Leach
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Engineering, Electrical & Electronic
Yiwen Song, James Spencer Lundh, Weijie Wang, Jacob H. Leach, Devon Eichfeld, Anusha Krishnan, Carlos Perez, Dong Ji, Trent Borman, Kevin Ferri, Jon-Paul Maria, Srabanti Chowdhury, Jae-Hyun Ryou, Brian M. Foley, Sukwon Choi
JOURNAL OF ELECTRONIC PACKAGING
(2020)
Article
Nanoscience & Nanotechnology
Yiwen Song, Daniel Shoemaker, Jacob H. Leach, Craig McGray, Hsien-Lien Huang, Arkka Bhattacharyya, Yingying Zhang, C. Ulises Gonzalez-Valle, Tina Hess, Sarit Zhukovsky, Kevin Ferri, Robert M. Lavelle, Carlos Perez, David W. Snyder, Jon-Paul Maria, Bladimir Ramos-Alvarado, Xiaojia Wang, Sriram Krishnamoorthy, Jinwoo Hwang, Brian M. Foley, Sukwon Choi
Summary: The beta-phase gallium oxide (Ga2O3) is a promising ultrawide bandgap (UWBG) semiconductor with potential for significant performance improvements over current commercial power electronics materials such as GaN and SiC. However, overheating remains a major challenge for Ga2O3 device technologies. A novel Ga2O3/4H-SiC composite wafer with high heat transfer performance and an epi-ready surface finish has been developed in this study, enabling successful growth of a Ga2O3 epitaxial layer while maintaining composite wafer integrity. The study also found that phonon transport across the Ga2O3/4H-SiC interface is influenced by the thickness of the SiNx bonding layer and unintentional SiOx interlayer, and extrinsic effects impact the thermal conductivity of the Ga2O3 layer.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga, Heather Splawn, Jacob Leach, Sriram Krishnamoorthy
Summary: By introducing a novel extreme permittivity dielectric field oxide, a vertical (001) beta-Ga2O3 field-plated Schottky barrier diode with high breakdown voltage was successfully fabricated in this study. TCAD simulations show that the surface breakdown electric field of the device reaches as high as 5.45 MV/cm, demonstrating the huge potential of Ga2O3 power devices for multi-kilovolt class applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte, Aaron J. Ptak, John Simon, Kevin Udwary, Jacob H. Leach, Heather Splawn
Summary: Hydride vapor phase epitaxy (HVPE) is a promising technology for reducing the cost of III-V materials and devices manufacturing, especially high-efficiency solar cells. By developing a kinetic model and improving a cracking model, researchers were able to reproduce experimental growth measurements of GaAs in an HVPE system.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
James Spencer Lundh, Kathleen Coleman, Yiwen Song, Benjamin A. Griffin, Giovanni Esteves, Erica A. Douglas, Adam Edstrand, Stefan C. Badescu, Elizabeth A. Moore, Jacob H. Leach, Baxter Moody, Susan Trolier-McKinstry, Sukwon Choi
Summary: In this study, Raman biaxial stress coefficients and strain-free phonon frequencies of aluminum nitride were determined for different phonon modes using experimental and theoretical approaches. The E-2 (high) mode was found to be the most sensitive for residual stress analysis, with a recommended Raman biaxial stress coefficient of -3.8cm(-1)/GPa and a strain-free phonon frequency of 656.68cm(-1). The study showed spatial variations in residual stress at both macroscopic and microscopic levels, with significant effects observed on device fabrication and performance.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Jianan Song, Sang-Woo Han, Haoting Luo, Jaime Rumsey, Jacob H. Leach, Rongming Chu
Summary: GaN metal-oxide-semiconductor structures were fabricated on bulk GaN substrates with c-, a-, and m-plane surfaces using atomic layer deposition of aluminum oxynitride thin films. Capacitance-voltage measurements at room temperature were conducted to extract interface trap number density and interface trap level density. Different values were observed among samples due to variations in dislocation densities and dangling bond densities on different planes.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Kevin L. Schulte, Wondwosen Metaferia, John Simon, David Guiling, Kevin Udwary, Gregg Dodson, Jacob H. Leach, Aaron J. Ptak
ACS APPLIED ENERGY MATERIALS
(2019)
Proceedings Paper
Thermodynamics
Bikramjit Chatterjee, Jacob H. Leach, Sarit Dhar, Sukwon Choi
PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)
(2018)