High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 11, Pages 114301
Publisher
AIP Publishing
Online
2016-03-16
DOI
10.1063/1.4943631
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy
- (2015) Louise C. Hirst et al. JOURNAL OF APPLIED PHYSICS
- Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy
- (2014) Zachary S. Bittner et al. APPLIED PHYSICS LETTERS
- Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 131 μm
- (2014) Wei-Sheng Liu et al. OPTICS EXPRESS
- InAs/GaAsSb quantum dot solar cells
- (2014) Sabina Hatch et al. OPTICS EXPRESS
- Submonolayer InGaAs/GaAs quantum dot solar cells
- (2014) Phu Lam et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Voltage recovery in charged InAs/GaAs quantum dot solar cells
- (2014) Phu Lam et al. Nano Energy
- Challenges to the concept of an intermediate band in InAs/GaAs quantum dot solar cells
- (2013) Robert E. Bartolo et al. APPLIED PHYSICS LETTERS
- Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)
- (2013) S. P. Bremner et al. JOURNAL OF APPLIED PHYSICS
- Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers
- (2012) Paul J. Simmonds et al. APPLIED PHYSICS LETTERS
- Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs1−xSbx quantum dots
- (2012) Kazutaka Nishikawa et al. JOURNAL OF APPLIED PHYSICS
- Self-organized InGaAs/GaAs quantum dot arrays for use in high-efficiency intermediate-band solar cells
- (2012) Yasushi Shoji et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
- (2011) Wei-Ting Hsu et al. APPLIED PHYSICS LETTERS
- Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge
- (2011) Kimberly A. Sablon et al. NANO LETTERS
- Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots
- (2010) Keun-Yong Ban et al. APPLIED PHYSICS LETTERS
- Model for intermediate band solar cells incorporating carrier transport and recombination
- (2009) Albert S. Lin et al. JOURNAL OF APPLIED PHYSICS
- Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer
- (2008) Y. D. Jang et al. APPLIED PHYSICS LETTERS
- Nanostructured Absorbers for Multiple Transition Solar Cells
- (2008) Michael Y. Levy et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More