Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Electronic properties of defects in high-fluence electron-irradiated bulk GaN

(2015) Tran Thien Duc et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

(2014) Tran Thien Duc et al.   APPLIED PHYSICS LETTERS

Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy

(2013) Tran Thien Duc et al.   JOURNAL OF APPLIED PHYSICS

Review of radiation damage in GaN-based materials and devices

(2013) Stephen J. Pearton et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN

(2012) Carl Hemmingsson et al.   JOURNAL OF CRYSTAL GROWTH

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

(2011) G. Pozina et al.   PHYSICAL REVIEW B

Characterization of electron irradiated GaN n+–p diode

(2007) Dong Uk Lee et al.   THIN SOLID FILMS