Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface
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Title
Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 1, Pages 014303
Publisher
AIP Publishing
Online
2016-01-05
DOI
10.1063/1.4938742
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Related references
Note: Only part of the references are listed.- Theoretical Insights to Niobium-Doped Monolayer MoS2–Gold Contact
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- ${\rm MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts
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- (2013) Cheng Gong et al. APPLIED PHYSICS LETTERS
- Tuning the Electronic and Chemical Properties of Monolayer MoS2 Adsorbed on Transition Metal Substrates
- (2013) Wei Chen et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Graphene adhesion on MoS2 monolayer: An ab initio study
- (2011) Yandong Ma et al. Nanoscale
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Doping of graphene by a Au(111) substrate: Calculation strategy within the local density approximation and a semiempirical van der Waals approach
- (2011) J. Sławińska et al. PHYSICAL REVIEW B
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- First-principles study of the interaction and charge transfer between graphene and metals
- (2009) P. A. Khomyakov et al. PHYSICAL REVIEW B
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