Article
Engineering, Electrical & Electronic
Kunihiro Kamataki, Yusuke Sasaki, Iori Nagao, Daisuke Yamashita, Takamasa Okumura, Naoto Yamashita, Naho Itagaki, Kazunori Koga, Masaharu Shiratani
Summary: High-quality amorphous silicon nitride (SiNx) thin films were fabricated by controlled growth of nanoparticles in SiH4+N2 multi-hollow remote plasma chemical vapor deposition (CVD) at low substrate temperature. The incorporation of nanoparticles in the film corresponded to a higher N/Si ratio, indicating nitridation of the nanoparticles in the plasma. The size of the nanoparticles was controlled by adjusting the N2/SiH4 gas flow ratio and total gas flow rate, resulting in higher N/Si ratio and lower hydrogen content in the film.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Wei-Ting Chen, Pei-Huang Hsu
Summary: A 5-nm-thick Mg0.05Sn0.95Ox thin film deposited using mist chemical vapor deposition serves as a channel layer for TFT. Compared to SnO2, Mg0.05Sn0.95Ox enhances crystallinity, reduces oxygen deficiencies, and widens the energy bandgap. The Mg0.05Sn0.95Ox-based TFT exhibits higher field-effect mobility, steeper subthreshold slope, and more stable electrical performance, making it a promising material for high electron mobility TFT applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Kunsik An, Ho-Nyun Lee, Kwan-Hyun Cho, Young Joon Han, Kyung-Tae Kang
Summary: A thin film encapsulation layer was fabricated using two sequential chemical vapor deposition processes to improve the stability and performance of organic light emitting diodes. The two-step encapsulation process, with LACVD as a buffer layer followed by LAPECVD as the main encapsulation layer, effectively alleviated the risk of plasma damaging the devices.
ORGANIC ELECTRONICS
(2021)
Article
Materials Science, Ceramics
Han-Yin Liu, Yu-Jie Liao, Hung-Yi Wu
Summary: This study investigates the deposition of InSnZnO thin films using mist chemical vapor deposition with different nitrogen/oxygen ratios of carrier gases. The results show that using nitrogen as the carrier gas leads to the highest field-effect mobility, and using a mixed nitrogen/oxygen carrier gas improves the electrical characteristics of the films.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Weichen Xiao, Mark A. Buckingham, Yi Li, Kerry Hazeldine, Bing Han, Sarah H. Cartmell, Alexander S. Eggeman, Alex S. Walton, David J. Lewis
Summary: This study reports the synthesis of a high entropy (CuZnCoInGa)S metal sulfide thin film using molecular precursors and deposited by AACVD for the first time.
CHEMICAL COMMUNICATIONS
(2023)
Article
Chemistry, Physical
Pierre Tomasini
Summary: The silicon chemical vapor deposition process via silane is determined using classical thermodynamics, showing that a linear function of temperature controls silicon growth rates and neatly maps the response of growth rate activation energy, providing clarity to the parameter space. The study demonstrates the portability of the linear function of temperature across reactors and extracts reactor scaling factors, reducing the complex silicon deposition process to its essentials through thermodynamics.
CHEMISTRY OF MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Jae Chan Park, Dae Hyun Kim, Tae Jun Seok, Dae Woong Kim, Ji-Hoon Ahn, Woo-Hee Kim, Tae Joo Park
Summary: We have successfully fabricated high-quality atomic-layer-deposited SiNx thin films at a low temperature of 300℃ using a novel remote plasma source called hollow cathode plasma (HCP). Compared to SiNx films deposited using the conventional remote plasma source, inductively-coupled plasma (ICP), the SiNx films grown using the HCP source exhibit superior properties. They have a higher N/Si ratio, lower oxygen impurity concentration, and exceptional oxidation resistance. Additionally, the HCP SiNx films show improved wet etch rate and excellent electrical properties, such as dielectric constant, gate leakage current, and dielectric breakdown field.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Materials Science, Ceramics
Rong Tu, Zhen Liu, Qingfang Xu, Song Zhang, Qizhong Li, Xian Zhang, Marina L. Kosinova, Takashi Goto
Summary: Silicon nitride films were fabricated using halide laser chemical vapor deposition (LCVD) for surface protection of electronic devices. The study investigated the effects of deposition parameters on the crystallinity, microstructure, deposition rate, Vickers microhardness, nano-hardness, and electrical resistivity. The highest deposition rate was achieved at a temperature of 1573 K and pressure of 10 kPa. The hardness of the films increased with temperature and the electrical resistivity decreased.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2023)
Article
Chemistry, Multidisciplinary
Paolo Giusto, Daniel Cruz, Tobias Heil, Nadezda Tarakina, Maddalena Patrini, Markus Antonietti
Summary: By chemically vapor depositing BCN thin films from a single source precursor, high transparency and refractive index values for reflective mirrors and lenses are achieved. These wide-bandgap semiconductor materials, with positive valence band, demonstrate stability against oxidation making them ideal for protective coatings and charge transport layers in solar cells. The simple and low-hazard method can open up possibilities for BCN thin films in optics and optoelectronics.
Article
Materials Science, Multidisciplinary
A. Abdelal, Z. Khatami, P. Mascher
Summary: This paper presents a comparative study of the properties of amorphous hydrogenated silicon carbonitride (SiCN:H) thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). The composition, growth rate, density, and refractive index values of the thin films were analyzed as functions of flow rates of acetylene and methane hydrocarbon precursors. The mechanical properties were studied through nanoindentation measurements, revealing the influence of carbon sources on the hardness and Young's modulus of the thin films.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Antoine Raison, Nathalie Prud'homme, Wu Wang, Diana Dragoe, Nita Dragoe
Summary: We have successfully synthesized a multi-cationic oxide (MgCoNiCuZn)O through pulsed liquid injection chemical vapor deposition. The synthesis was carried out at temperatures ranging from 400 degrees C to 550 degrees C, using five metal-organic precursors solubilized in dimethoxyethane (DME). The microstructure of the material was analyzed using HRTEM with HAADF, SEM, EDS, XPS, and XRD techniques before and after annealing.
Article
Materials Science, Multidisciplinary
Leonid Yu. Beliaev, Evgeniy Shkondin, Andrei V. Lavrinenko, Osamu Takayama
Summary: This study compares the optical properties of silicon nitride thin films deposited by different methods. The analysis shows that the deposition method has a significant influence on the optical properties, especially in the ultraviolet wavelength range.
Article
Engineering, Electrical & Electronic
Wolfgang Rao Bodlos, Sang Kyu Park, Birgit Kunert, Soo Young Park, Roland Resel
Summary: The study found that thin films deposited at different temperatures in a specific molar ratio cocrystal system exhibit different crystal structures and transistor performance. Crystal growth is enhanced with increasing temperature, but performance decreases at higher temperatures.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
W. Ke, K. Yang, X. D. Zhu
Summary: Amorphous Si-B-N alloy films prepared on SS304 stainless steel substrates by RF-PCVD technique exhibited improved hardness and wear resistance, with a surface morphology of hilly clusters composed of small particles.
APPLIED SURFACE SCIENCE
(2021)
Article
Crystallography
Feifei Lan, Rui Zhou, Ziyue Qian, Yuansha Chen, Liming Xie
Summary: In this study, Fe3O4 thin films with room-temperature ferrimagnetism were successfully grown using a simple chemical vapor deposition method. The films maintained good magnetic properties even at thicknesses as low as 4 nm. Various analysis techniques were used to study the structure and quality of the films, and it was found that the saturation magnetization was higher than that of bulk materials and the Verwey transition was observed. This work provides a new method for synthesizing ultrathin films with ferrimagnetic properties for applications in electronics, spintronics, and memory devices.
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)