4.8 Article

Origin of Contrasting Emission Spectrum of Bromide versus Iodide Layered Perovskite Semiconductors

Journal

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 13, Issue 12, Pages 2737-2743

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.2c00362

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Funding

  1. DST-India [DST/INT/SWD/VR/P-20/2019]

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The origin of broadband emission in two-dimensional layered halide perovskites is studied using temperature-dependent time-resolved photoluminescence (PL) spectra. The broad emission is observed due to the coupling of triplet states in the organic barrier and inorganic well.
The origin of broadband emission is studied using temperature-dependenttime-resolved photoluminescence (PL) spectra for two-dimensional (2D) layered halideperovskites (i.e., (PEA)2PbBr4= phenylethylammonium lead bromide and (PEA)2PbI4=phenylethylammonium lead iodide) semiconductors. Both perovskite systems show only asingle peak exciton emission at room temperature, which becomes multipeak exciton emissionsat low temperatures. For temperatures below 100 K, the (PEA)2PbBr4film gives broad PLemission, Stokes shifted by 750 meV from narrow exciton emission peaks, whereas the(PEA)2PbI4film does not show any broad emission. Kinetics of various peaks could provideuseful insight to propose a consistent energy level scheme associated with a barrier (PEA) andwell (PbX64-) material system's electronic states. This broad emission in (PEA)2PbBr4perovskite is observed due to coupling of triplet states in the inorganic well (PbBr64-) andorganic barrier (PEA) layer, which is in contrast to a proposed model based on self-trappedexciton

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