Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 672, Issue -, Pages 433-439Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.01.265
Keywords
Electron emission; Few layer graphene; Nitrogen functionalization
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Funding
- National Key Basic Research Program of China [2010CB327703, 2007CB935501]
- National Natural Science Foundation of China [60925001]
- Natural Science Foundation of Guangdong [2014A030310302]
- Fundamental Research Funds for the Central Universities [21615309]
- Science and Technology Department, Guangdong Province
- Economic and Information Industry Commission of Guangdong Province
- Science & Technology and Information Department of Guangzhou City
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The effects of nitrogen functionalization on the field emission properties of vertically aligned few-layer graphene (FLG) nanowall thin films are investigated. Lowered work function and enhanced electron emission property are observed after ammonia plasma treatment. The turn-on field (defined at 10 mu Acm(-2)) is found to be decreased from 6.5 to 4.6 V mu m(-1). Additionally, more stable emission with fluctuation less than 5% is obtained after surface N-functionalization. The electron configuration of nitrogen in FLG edge is proposed to be amine (C-NH2) terminal configuration. Nitrogen doping could significantly increases the pi density states near the Fermi level. The maximum upward shift of E-F is determined to be similar to 0.23 eV by low-energy XPS measurements, which mainly accounts for the lower turn-on electric field. Meanwhile, nitrogen functionalization would minimize surface desorption and accounts for more uniform work function distribution. Finally, the nonlinear characteristics of Fowler-Nordheim plots could be understood by thermionic-field emission process. (C) 2016 Elsevier B.V. All rights reserved.
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