Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 662, Issue -, Pages 528-533Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.12.095
Keywords
Phosphorene; Magnetism; Electronic properties; Spin polarization
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Funding
- Program for New Century Excellent Talents in University in State Education Ministry of China [NCET-13-0409]
- High Performance Computing Center of Tianjin University, China
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We calculate the electronic structure and magnetism of monolayer phosphorene doped by nonmagnetic atoms. O, S and Se impurities can induce the magnetic moment. O doping makes it become a spingapless semiconductor, but S and Se doping induces a half-metallic characteristic. The p orbital of dopant has a strong hybridization with P around impurities, which induces spin splitting of P and impurities. C induces a metallic character. B acts as n-type dopant and F results in p-type dopant. The magnetism of phosphorene doped by two O atoms strongly depends on the doping sites and distance between two O atoms. (C) 2015 Elsevier B.V. All rights reserved.
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