MOSFET-Based Memristor for High-Frequency Signal Processing

This research article proposes a floating memristor emulator configuration based on n-type MOSFETs only. The proposed memristor comprises three nMOS and an extra nMOS for an external grounded capacitor. Compared to the existing literature, the proposed floating MOS memristor enables a simple design without any sophisticated design complexity. The actual fingerprint of the memristor as a pinched hysteresis loop with different frequency domains and composite characteristics as incremental and decremental are well examined using computer simulation with 90-nm CMOS technology parameters for MOSFETs. The power consumed by the proposed circuit is 2.6 mu W. In addition, an experimental test using off-the-shelf components is investigated to verify the theoretical and simulated results. Moreover, the proposed nMOS-memristor emulator application is suitable for the modulation and demodulation of binary frequency-shift keying (BFSK) and Boolean logic gates.

Automated summary

This research proposes a floating memristor emulator configuration based on n-type MOSFETs, which enables a simple design without any sophisticated complexity. The performance of the memristor is verified through experiments and simulations, and it shows potential applications in modulation and demodulation.