Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

Published 2016 View Full Article

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Title
Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 4S, Pages 04EP03
Publisher
Japan Society of Applied Physics
Online
2016-02-24
DOI
10.7567/jjap.55.04ep03

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