Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric

Title
Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 4S, Pages 04EE04
Publisher
Japan Society of Applied Physics
Online
2016-03-08
DOI
10.7567/jjap.55.04ee04

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