Decoration Strategy in Para Boron Position: An Effective Way to Achieve Ideal Multi-Resonance Emitters

Narrowband, full-color, and quenching-resistant emitters are urgently needed for the next generation high-resolution displays. Though the flourishment of narrowband multiple resonance (MR) emitters in blue region, these materials still face thorny challenges such as effective light-color regulation strategies and concentration-induced spectral broadening/emission quenching. Herein, the research status of an effective decoration strategy for para B position is highlighted. On one hand, the introduction of an electron donor or acceptor could induce a hypsochromic- or bathochromic-shift emission, respectively, without undesirable FWHM broadening. On the other hand, a more advanced molecular motif is further proposed through adopting a peripheral benzene ring on the para position of the B-substituted phenyl in MR core to construct the high-purity, high-efficiency, quenching-resistant and stable MR emitters. Such concept is expected to provide a possible way for the modification, optimization and expansion of MR emitters to meet more possible applications.

Automated summary

This article discusses the need for narrowband, full-color, and quenching-resistant emitters for the next generation high-resolution displays, and highlights an effective decoration strategy for the para B position to address challenges faced by existing materials in terms of light-color regulation and emission characteristics.