Electronic phase transition in CrN thin films grown by reactive RF magnetron sputtering

Chromium nitride thin films were prepared by reactive radio frequency magnetron sputtering on glass and Si (001) substrates. Thin films were grown at different nitrogen to argon flow rate ratio and their effect on the film composition, band gap and electronic phase transition was studied by different experimental technique. X-ray diffraction analyses establish that CrN films predominantly grow in [111](CrN) and [002](CrN) directions irrespective of the substrates used for the growths. The band gap was found to vary with the composition of the films. All films are semiconducting at room temperature and show discontinuity in their resistivity versus temperature curve indicating electronic transition. But the low temperature electronic phase depends on the growth conditions and composition of the films.

Automated summary

Chromium nitride thin films were prepared by reactive radio frequency magnetron sputtering, and their properties were studied in relation to the nitrogen to argon flow rate ratio and film composition. The results show that the film composition, band gap, and electronic phase transition are influenced by the gas flow ratio and film composition.