4.8 Article

Manipulating Picosecond Photoresponse in van der Waals Heterostructure Photodetectors

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 32, Issue 30, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202200973

Keywords

2D materials; photodetectors; scanning photocurrent mapping; time-resolved photocurrent; van der Waals heterostructures

Funding

  1. National Natural Science Foundation of China [52022029, 91850116, 51772084, U19A2090]
  2. Sino-German Center for Research Promotion [GZ1390]
  3. Hunan Provincial Natural Science Foundation of China [2018RS3051, 2019XK2001]

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In this study, van der Waals heterostructure photodetectors based on MoS2/WSe2 p-n and n-n junctions were constructed and the picosecond photoresponse was manipulated by combining photovoltaic and photothermoelectric effects. The experiments showed that a TRPC peak at zero time delay was observed in the n-n junction device with a short decay time, while a TRPC dip was observed in the p-n junction and pure WSe2 devices, indicating opposite current polarities between PV and PTE. By modulating the ultrafast photocurrent, a transition from a peak to a dip was realized, and detailed carrier transport dynamics were analyzed.
Self-powered ultrafast 2D photodetectors have demonstrated great potential in imaging, sensing, and communication. Understanding the intrinsic ultrafast charge carrier generation and separation processes is essential for achieving high-performance devices. However, probing and manipulating the ultrafast photoresponse is limited either by the temporal resolution of the conventional methods or the required sophisticated device configurations. Here, van der Waals heterostructure photodetectors are constructed based on MoS2/WSe2 p-n and n-n junctions and manipulate the picosecond photoresponse by combining photovoltaic (PV) and photothermoelectric (PTE) effects. Taking time-resolved photocurrent (TRPC) measurements, a TRPC peak at zero time delay is observed with decay time down to 4 ps in the n-n junction device, in contrast to the TRPC dip in the p-n junction and pure WSe2 devices, indicating an opposite current polarity between PV and PTE. More importantly, with an ultrafast photocurrent modulation, a transition from a TRPC peak to a TRPC dip is realized, and detailed carrier transport dynamics are analyzed. This study provides a deeper understanding of the ultrafast photocurrent generation mechanism in van der Waals heterostructures and offers a new perspective in instruction for designing more efficient self-powered photodetectors.

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