Journal
ACS NANO
Volume 16, Issue 4, Pages 6725-6733Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c01388
Keywords
monolayer molybdenum disulfide; operando; X-ray absorption spectroscopy; sulfur vacancy; hydrogen evolution reaction; DFT
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Funding
- Stanford Precourt Institute for Energy
- Stanford Natural Gas Initiative
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-76SF00515]
- National Science Foundation [ECCS-1542152]
- U.S. Department of Energy Office of Science User Facility [DE-AC02-05CH11231]
- University of Arizona
- Institute of Engineering Research at Seoul National University
- Institute of Advanced Machines and Design at Seoul National University (SNU-IAMD)
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Chemical Sciences, Geosciences, and Biosciences Division, Catalysis Science Program
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This study reveals the presence of clustered S-vacancies on the basal plane of monolayer MoS2 and provides insights into their role in catalytic reactions through in situ X-ray absorption spectroscopy and first-principles calculations.
The nature of the S-vacancy is central to controlling the electronic properties of monolayer MoS2. Understanding the geometric and electronic structures of the S-vacancy on the basal plane of monolayer MoS2 remains elusive. Here, operando S K-edge X-ray absorption spectroscopy shows the formation of clustered S-vacancies on the basal plane of monolayer MoS2 under reaction conditions (H-2 atmosphere, 100-600 degrees C). First-principles calculations predict spectral fingerprints consistent with the experimental results. The Mo K-edge extended X-ray absorption fine structure shows the local structure as coordinatively unsaturated Mo with 4.1 +/- 0.4 S atoms as nearest neighbors (above 400 degrees C in an H-2 atmosphere). Conversely, the 6-fold Mo-Mo coordination in the crystal remains unchanged. Electrochemistry confirms similar active sites for hydrogen evolution. The identity of the S-vacancy defect on the basal plane of monolayer MoS2 is herein elucidated for applications in optoelectronics and catalysis.
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