Revealing the strain-associated physical mechanisms impacting the performance and stability of perovskite solar cells

Identification and investigation of strain at buried interfaces in halide perovskite photovoltaics are crucial for directing research on the performance and stability of perovskite solar cells. In this work, we find a gradual shift in the band gap of up to 60 meV over a perovskite layer thickness of 300 nm caused by interfacial strain. This graded band gap is desired insofar as it relates to the aspect of device engineering. However, in parallel, the increased defect density causes charge recombination at the buried interface. These two effects compensate for each other, resulting in an overall performance improvement under standard 1 sun illumination. Nevertheless, the disadvantage of enhanced defect density is clearly observed at low-light intensities, where the device performance becomes dominated by charge recombination and ion migration. Moreover, the strained interfaces are proven to induce enhanced defect densities, causing significantly accelerated device degradation under illumination as well as in the dark.

Automated summary

Identification and investigation of strain at buried interfaces in halide perovskite photovoltaics are crucial for directing research on the performance and stability of perovskite solar cells. In this work, we find that interfacial strain causes a gradual shift in the band gap, which is desired for device engineering. However, the increased defect density leads to charge recombination and ion migration, resulting in decreased performance.