Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
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Title
Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
Authors
Keywords
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Journal
Science Advances
Volume 7, Issue 49, Pages -
Publisher
American Association for the Advancement of Science (AAAS)
Online
2021-12-04
DOI
10.1126/sciadv.abj6711
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