Far-IR to deep-UV adaptive supercontinuum generation using semiconductor nano-antennas via carrier injection rate modulation

Supercontinuum generating sources, which incorporate a non-linear medium that can generate a wideband intensity spectrum under high-power excitation, are ideal for many applications of photonics such as spectroscopy and imaging. Supercontinuum generation using ultra-miniaturized devices is of great interest for on-chip imaging, on-chip measurement, and for future integrated photonic devices. In this study, semiconductor nano-antennas are proposed for ultra-broadband supercontinuum generation via analytical and numerical investigation of the electric field wave equation and the Lorentz dispersion model, incorporating semiconductor electron dynamics under optical excitation. It is shown that by a rapid modulation of the carrier injection rate for a semiconductor nano-antenna, one can generate an ultra-wideband supercontinuum that extends from the far-infrared (Far-IR) range to the deep-ultraviolet (Deep-UV) range for an infrared excitation of arbitrary intensity level. The modulation of the injection rate is achieved by high-intensity pulsed-pump irradiation of the nano-antenna, which has a fast nonradiative electron recombination mechanism that is on the order of sub-picoseconds. It is shown that when the pulse period of the pump irradiation is of the same order with the electron recombination time, rapid modulation of the free electron density occurs and electric energy accumulates in the nano-antenna, allowing for the generation of a broad supercontinuum. The numerical results are compared with the semiempirical second harmonic generation efficiency results for validation and a mean accuracy of 99.7% is observed. The aim of the study is to demonstrate that semiconductor nano-antennas can be employed to achieve superior supercontinuum generation performance at the nanoscale and the process can be programmed in an adaptive manner for continuous spectral shaping via tuning the pulse period of the pump irradiation.

Automated summary

Semiconductor nano-antennas are proposed for ultra-broadband supercontinuum generation by rapidly modulating the carrier injection rate. High-intensity pulsed-pump irradiation of the nano-antennas allows for the generation of a broad supercontinuum at the nanoscale, enabling continuous spectral shaping.