On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment

Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with the structure of the films. Photoluminescence (PL) spectra show that the UV intensity increases much by heat treatment and after 1000 degrees C annealing the doped films have stronger UV emission than that of an un-doped film. The enhanced UV emission is related to crystallinity improvements of the films. After heat treatment at 1000 degrees C Zn (Tb) silicates had formed. The film prepared with a Tb concentration of 0.029 at.% showed the best crystallinity and highest UV intensity. Finally, it was shown that the UV PL intensity can be increased further with TiN nanoparticle capping on the surface of the films.

Automated summary

In this study, terbium-doped zinc oxide thin films were deposited on silicon substrates by magnetron sputtering in an oxygen-containing plasma, and the effect of heat treatment on the UV emission was investigated. The results showed that heat treatment improved the crystallinity and UV emission intensity of the films, with doped films exhibiting stronger UV emission after annealing at 1000 degrees Celsius. The best crystallinity and highest UV intensity were observed in films with a Tb concentration of 0.029 at.%. Additionally, further enhancement of UV PL intensity was achieved by capping the films with TiN nanoparticles on the surface.