4.7 Article

Extended anisotropic phonon dispersion and optical properties of two-dimensional ternary SnSSe

Journal

INORGANIC CHEMISTRY FRONTIERS
Volume 9, Issue 2, Pages 294-301

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1qi01141c

Keywords

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Funding

  1. National Key R&D Program of China [2018YFC0910602]
  2. National Natural Science Foundation of China [61775145/61525503/61620106016]
  3. Project of the Department of Education of Guangdong Province [2016KCXTD007]
  4. Shenzhen Basic Research Project [JCYJ20190808123401666/GJHZ20190822095420249/JCYJ20170412110212234]
  5. Narodowe Centrum Nauki, Poland [2018/31/B/ST3/02111]
  6. Scientific Research at King Khalid University, Saudi Arabia [R. G. P. 21/318/42]
  7. Beihang Hefei Innovation Research Institute China [BHKX-19-02]

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The phonon dispersion and optical properties of mechanically exfoliated SnSSe were investigated, revealing its anisotropic nature and the softening of Raman modes with temperature. Weak interlayer interaction in SnSSe layers and significant suppression of PL signals at higher temperatures were also observed. These findings provide insights for controlling phonon propagation and thermal management in thermoelectric, photovoltaic, and other materials.
The phonon dispersion and optical properties of mechanically exfoliated SnSSe were investigated with the aid of high-resolution Raman scattering and photoluminescence (PL) spectroscopies along with first-principles calculations. The Raman modes indicate two-fold symmetry for in-plane vibrations and four-fold symmetry for out-of-plane vibrations. Consequently, the different polarization properties of the phonon modes demonstrate the anisotropic nature of SnSSe. The softening of Raman modes with the increase in temperature is described in terms of thermal expansion and anharmonic scattering, which contributes to phonon vibration, whereas a weak interlayer interaction in the SnSSe layers is observed. The significant suppression of PL signals at a higher temperature is related to the increase in the non-radiative recombination of electron-hole pairs as a result of the increment in the number of phonons and in the thermal excitation of carriers. In addition, the fabricated electrical device on few-layer SnSSe shows a significant I-ON/I-OFF ratio and good electron mobility for optoelectronic applications. These results further improve the understanding of the microscopic details of SnSSe as an important material, providing better insights to control phonon propagation in thermoelectric, photovoltaic, and other materials to induce thermal management.

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