Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 degrees C, 225 degrees C, 300 degrees C, 375 degrees C, and 450 degrees C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 degrees C, 225 degrees C, and 300 degrees C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 degrees C to 300 degrees C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 degrees C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Automated summary

The deposition temperature has a significant influence on the properties of MoS2 thin films, affecting their crystallization quality, Raman vibrational modes, deposition rate, optical transmission, and bandgap. Within a certain range, higher deposition temperatures improve film quality and properties, but can also lead to the formation of MoO3 thin films at temperatures above 375 degrees C, causing changes in film properties.