4.5 Article

Orientated Growth of Ultrathin Tellurium by van der Waals Epitaxy

Journal

ADVANCED MATERIALS INTERFACES
Volume 9, Issue 5, Pages -

Publisher

WILEY
DOI: 10.1002/admi.202101540

Keywords

moire structure; orientated growth; tellurium

Funding

  1. US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division within the Electronic Materials Program [DE-AC02-05CH11231, KC1201]
  2. Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]

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Tellurium, a van der Waals semiconductor with inherent 1D crystal structure, shows intriguing anisotropic physical properties. This study systematically investigates orientated growth of tellurium on the surface of 2D transition metal dichalcogenides, successfully achieving aligned growth on specific substrates, and extending to alloy growth.
Tellurium, as an elemental van der Waals semiconductor, has intriguing anisotropic physical properties owing to its inherent 1D crystal structure. To exploit the anisotropic and thickness-dependent behavior, it is important to realize orientated growth of ultrathin tellurium. Here, van der Waals epitaxial growth of Te on the surface of 2D transition metal dichalcogenides is systematically investigated. Orientated growth of Te with a thickness down to 5 nm is realized on three-fold symmetric substrates (WSe2, WS2, MoSe2, and MoS2), where the atomic chains of Te are aligned with the armchair directions of substrates. 1D/2D moire superlattices are observed for the Te/WSe2 heterostructure. This method is extended to the growth of SeTe alloys, providing flexibility for band engineering. Finally, growth of textured Te film is demonstrated on the lower-symmetry surface of WTe2.

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