Triboelectric potential tuned dual-gate IGZO transistor for versatile sensory device

Sophisticated intelligent interactive system calls for energy-efficient strategy to multifunctional versatile sensory devices. Triboelectric potential derived from triboelectric nanogenerators (TENGs) can be readily utilized to integrate with dual-gate transistor and implement multiple sensing applications. Here, we present a device-level versatile sensory platform based on triboelectric potential tuned dual-gate IGZO transistors with a common bottom gate and an air-dielectric top gate, which can be used as multifunctional sensors (including distance/ pressure/optical sensor and artificial photonic synapse). The versatile transistor device can be readily driven by the triboelectric potential and associated with mechanical displacement as a highly sensitive distance sensor. According to the capacitance change of air-dielectric top gate upon external pressure and the intrinsic photoconductivity of IGZO channel, it also integrates a pressure and optical sensor. As the existence of oxygendeficiency-related persistent photocurrent characteristics in IGZO channel, versatile transistor device is also facile to imitate the biological synaptic behaviors by light pulse. Assisted with synergistic triboelectric potential modulation, the updated synaptic weights can be readily used for image edge detection. The proposed devicelevel sensory platform has great potentials in versatile and multifunctional intelligent sensors, interactive robotic skin, image recognition and neuromorphic chip.

Automated summary

The proposed device-level sensory platform based on triboelectric potential tuned dual-gate IGZO transistors can be used for various sensor applications and artificial intelligence fields.