4.6 Review

Thermal Evaporation for Halide Perovskite Optoelectronics: Fundamentals, Progress, and Outlook

Journal

ADVANCED OPTICAL MATERIALS
Volume 10, Issue 4, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202101770

Keywords

film growth mechanisms; light-emitting diodes; metal halide perovskites; solar cells; thermal evaporation

Funding

  1. Post-Doctoral Innovative Talent Support Program [BX20200142]
  2. National Natural Science Foundation of China [21871099, 62104077, 62050039, 51902113, 51761145048]
  3. China Postdoctoral Science Foundation [2020M682413, 2020M682398]
  4. Innovation Funds of WNLO

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Metal halide perovskites have significantly advanced optoelectronic devices, particularly in the fields of photovoltaics and light-emitting diodes. The thermal evaporation method offers advantages such as easy control of film thickness, absence of toxic solvents, and compatibility with existing industry practices.
Metal halide perovskites have rapidly advanced the field of optoelectronic devices, especially for photovoltaic (PV) and light-emitting diode (LED) fields with efficiencies comparable to those well-established technologies. However, most of the reported perovskite devices are fabricated using lab-scale solution-processing methods. The thermal evaporation (TE) method, a mature technique widely used in the semiconductor industry, could be a promising alternative technology for large-area and scale-up fabrication. Moreover, the TE method is free of toxic solvent, enables easy control of film thickness, and is compatible with existing industry. This review first presents the fundamentals of the TE method, with an emphasis on the growth mechanism of perovskite films. This is followed by the progress of thermally evaporated perovskite-based optoelectronic devices, especially solar cells and light-emitting diodes. Last, the device-oriented design principles via TE technology are summarized and future development opportunities are overviewed.

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