Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range
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Title
Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range
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Journal
Silicon
Volume -, Issue -, Pages -
Publisher
Springer Science and Business Media LLC
Online
2022-01-10
DOI
10.1007/s12633-021-01640-0
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