-Ga2O3

Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped beta-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL & PRIME;) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL & PRIME; and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.

Automated summary

Temperature dependent cathodoluminescence measurements were used to investigate the luminescence behavior of Si-doped beta-Ga2O3 before and after proton and alpha-particle irradiation. The results showed that radiation-induced trap levels were non-radiative, and the temperature had an impact on thermal quenching of UVL bands and ionization of shallow Si donors.