Journal
NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-021-26399-1
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Funding
- National Natural Science Foundation [61974082, 61704096, 61836004]
- National Key R&D Program of China [2018YFE0200200]
- Youth Elite Scientist Sponsorship (YESS) Program of China Association for Science and Technology (CAST) [2019QNRC001]
- supercomputing wales project [scw1070]
- Beijing science and technology program [Z181100001518006, Z191100007519009]
- Suzhou-Tsinghua innovation leading program [2016SZ0102]
- CETC Haikang Group-Brain Inspired Computing Joint Research Center
- Tsinghua-IDG/McGovern Brain-X program
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The development of resistive switching devices based on tellurium filaments offers a solution to the perennial current-volatility dilemma, with the potential to function as selectors or memories and unique design space. Preliminary optimization efforts indicate a promising outlook for Te-based resistive switching devices.
The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices. Resistive switching devices have great promise for a wide variety of technological applications. Here, Yang et al demonstrate that electrochemically induced tellurium filament can give rise to resistive switching, and show that devices based on this can provide a number of advantages compared to metallic filament-based devices.
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