4.6 Article

Solution-processed vanadium oxides as a hole-transport layer for Sb2Se3 thin-film solar cells

Journal

SOLAR ENERGY
Volume 231, Issue -, Pages 1-7

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2021.11.009

Keywords

Sb2Se3; Thin-film solar cells; VOx; Hole-transport layer; Open-circuit voltage

Categories

Funding

  1. National Science Foundation [1944374, 2019473, 2127640]
  2. National Aeronautics and Space Administration, Alabama EPSCoR International Space Station Flight Opportunity program [80NSSC20M0141]
  3. USDA National Institute of Food and Agriculture, AFRI project award [2020-67022-31376]
  4. University of Nevada Reno
  5. Direct For Mathematical & Physical Scien
  6. Division Of Materials Research [2127640] Funding Source: National Science Foundation
  7. Directorate For Engineering
  8. Div Of Electrical, Commun & Cyber Sys [1944374] Funding Source: National Science Foundation
  9. Div Of Civil, Mechanical, & Manufact Inn
  10. Directorate For Engineering [2019473] Funding Source: National Science Foundation

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In this study, inorganic vanadium oxides were utilized as a hole transport layer to enhance the efficiency and open-circuit voltage of antimony selenide solar cells. The use of VOx resulted in a significant increase in built-in voltage and improved device efficiency from 5.5% to 6.3%.
Antimony selenide (Sb2Se3) is a promising light absorber material for solar cells because of its superior photovoltaic properties. However, the current performance of the Sb2Se3 solar cell is much lower than its theoretical value (similar to 32%) due to its low open-circuit voltage (V-OC). In this paper, we have demonstrated inorganic vanadium oxides (VOx) as a hole transport layer (HTL) for Sb2Se3 solar cells to enhance efficiency through the V-OC improvement. Here, a solution-processed VOx through the decomposition of the triisopropoxyvanadium (V) oxide is deposited on the Sb2Se3 absorber layer prepared by close-spaced sublimation (CSS). With VOx HTL, the built-in voltage (V-bi) is significantly increased, leading to improved V-OC for the Sb2Se3 solar cell devices. As a result, the efficiency of the device increases from an average efficiency of 5.5% to 6.3% with the VOx.

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