Reliability analysis of cost-efficient CH3NH3PbI3 based dopingless tunnel FET

Electrostatically-doped TFETs (ED-TFETs) are amongst the most widely used cost-efficient steeper devices due to the use of charge-plasma technique and tunneling mechanism. However, the reliability analysis of ED-TFETs is considered an important concern for the research community. Most studies have only focused on improving the performance of ED-TFETs such as dopingless (DL)-TFET in terms of on-current (I (ON)), subthreshold swing (SS) and threshold voltage (V (th)), rather than investigating the reliability issues. In this context, the aim of our work is to investigate the reliability analysis of our previously reported methyl-ammonium lead tri-iodide materials based DL-TFET (MAPbI(3)-DL-TFET). The influence of interface trap charges, shallow and deep defects on the electrical and analog performance of MAPbI(3)-DL-TFET has been analyzed using the Silvaco ATLAS tool at room temperature. Extensive results produced show that deep-level (Gaussian) defects impact the performance of the device prominently while the tail defects affect the device performance insignificantly. The present findings showed that the donor/acceptor trap charges impact the device in the subthreshold region considerably, while in the superthreshold region the impact of trap charges is marginal. In our view, these results emphasize the reliability analysis of MAPbI(3)-DL-TFET for the very first time. We hope that our research will be useful and valuable for DL-TFET manufacturers.

Automated summary

This study investigates the reliability analysis of a dopingless tunnel field-effect transistor (DL-TFET) based on methyl-ammonium lead tri-iodide materials. The results show that deep-level defects have a significant impact on the device performance, while tail defects have minimal effect. Moreover, donor/acceptor trap charges have a considerable influence on the device in the subthreshold region but have a marginal impact in the superthreshold region.