InAs/InAsSb type-II superlattice with near room-temperature long-wave emission through interface engineering

Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material

(2020) Lilian K. Casias et al.   APPLIED PHYSICS LETTERS

High operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices

(2020) Gongrong Deng et al.   OPTICS EXPRESS

Shedding Light on the Role of Misfit Strain in Controlling Core–Shell Nanocrystals

(2020) Jianxiong Zhao et al.   ADVANCED MATERIALS

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

(2020) David Z. Ting et al.   Micromachines

Suppressed Lattice Disorder for Large Emission Enhancement and Structural Robustness in Hybrid Lead Iodide Perovskite Discovered by High‐Pressure Isotope Effect

(2020) Lingping Kong et al.   ADVANCED FUNCTIONAL MATERIALS

Mid- and long-infrared emission properties of InxGa1−xAsySb1−y quaternary alloy with Type-II InAs/GaSb superlattice distribution

(2020) Peng Du et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

(2019) Evangelia Delli et al.   ACS Photonics

Mid-wavelength infrared InAsSb/InAs nBn detectors and FPAs with very low dark current density

(2019) Alexander Soibel et al.   APPLIED PHYSICS LETTERS

Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

(2019) David Z. Ting et al.   JOURNAL OF ELECTRONIC MATERIALS

InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors

(2019) Tetiana Manyk et al.   SENSORS

Giant Alloyed Hot Injection Shells Enable Ultralow Optical Gain Threshold in Colloidal Quantum Wells

(2019) Yemliha Altintas et al.   ACS Nano

Type-II superlattice photodetectors versus HgCdTe photodiodes

(2019) A. Rogalski et al.   PROGRESS IN QUANTUM ELECTRONICS

InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

(2019) Gamini Ariyawansa et al.   Micromachines

Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice

(2019) Peng Du et al.   Physica Status Solidi-Rapid Research Letters

Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

(2018) Honggyu Kim et al.   JOURNAL OF APPLIED PHYSICS

InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

(2018) J A Keen et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots

(2017) Young-Shin Park et al.   NANO LETTERS

Effect of rapid thermal annealing on the optical properties of GaAsSb alloys

(2017) Xian Gao et al.   Optical Materials Express

High Lattice Match Growth of InAsSb Based Materials by Molecular Beam Epitaxy

(2016) Yang Ren et al.   CHINESE PHYSICS LETTERS

Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices

(2016) H.J. Haugan et al.   JOURNAL OF CRYSTAL GROWTH

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs 1−x Sb x type-II superlattices

(2016) E.H. Steenbergen et al.   JOURNAL OF LUMINESCENCE

Cardioprotective effects of Cu(II)ATSM in human vascular smooth muscle cells and cardiomyocytes mediated by Nrf2 and DJ-1

(2016) Salil Srivastava et al.   Scientific Reports

Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core–Shell Nanowires

(2015) Xuan Fang et al.   ACS Applied Materials & Interfaces

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices

(2015) Zhi-Yuan Lin et al.   APPLIED PHYSICS LETTERS

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

(2015) B. V. Olson et al.   APPLIED PHYSICS LETTERS

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

(2015) P. T. Webster et al.   JOURNAL OF APPLIED PHYSICS

Growth of InAs–InAsSb SLS through the use of digital alloys

(2015) T. Schuler-Sandy et al.   JOURNAL OF CRYSTAL GROWTH

Effect of Auger Recombination on Lasing in Heterostructured Quantum Dots with Engineered Core/Shell Interfaces

(2015) Young-Shin Park et al.   NANO LETTERS

Intensity- and Temperature-Dependent Carrier Recombination inInAs/InAs1−xSbxType-II Superlattices

(2015) B. V. Olson et al.   Physical Review Applied

Evolution of interfacial properties with annealing in InAs/GaSb superlattice probed by infrared photoluminescence

(2014) Xiren Chen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices

(2014) Y. Lin et al.   JOURNAL OF ELECTRONIC MATERIALS

Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

(2013) L. Höglund et al.   APPLIED PHYSICS LETTERS

Heterostructuring Nanocrystal Quantum Dots Toward Intentional Suppression of Blinking and Auger Recombination

(2013) Jennifer A. Hollingsworth   CHEMISTRY OF MATERIALS

Exciton Localization and Optical Properties Improvement in Nanocrystal-Embedded ZnO Core–Shell Nanowires

(2013) Rui Chen et al.   NANO LETTERS

Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes

(2013) Wan Ki Bae et al.   Nature Communications

Signature of optical absorption in highly strained and partially relaxed InP/GaAs type-II quantum well superlattice structures

(2012) S. D. Singh et al.   JOURNAL OF APPLIED PHYSICS

Suppressed Blinking and Auger Recombination in Near-Infrared Type-II InP/CdS Nanocrystal Quantum Dots

(2012) Allison M. Dennis et al.   NANO LETTERS

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

(2011) E. H. Steenbergen et al.   APPLIED PHYSICS LETTERS