RF/Analog performance of GaAs Multi-Fin FinFET with stress effect

Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET

(2021) Bhavya Kumar et al.   Silicon

The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET

(2020) S. Manikandan et al.   Journal of Computational Electronics

Analysis on DC and RF/Analog Performance in Multifin-FinFET for Wide Variation in Work Function of Metal Gate

(2020) Yash Hirpara et al.   Silicon

Investigation of Short Channel Effects (SCEs) and Analog/RF Figure of Merits (FOMs) of Dual-Material Bottom-Spacer Ground-Plane (DMBSGP) FinFET

(2019) Vadthiya Narendar et al.   Silicon

Temperature-dependent short-channel parameters of FinFETs

(2018) Rinku Rani Das et al.   Journal of Computational Electronics

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

(2018) Daniel Nagy et al.   IEEE Journal of the Electron Devices Society

Sub-20 nm GaAs junctionless FinFET for biosensing application

(2018) Anuj Chhabra et al.   VACUUM

Temperature dependent study of Fin-FET drain current through optimization of controlling gate parameters and dielectric material

(2017) Rinku Rani Das et al.   SUPERLATTICES AND MICROSTRUCTURES

A technique to incorporate both tensile and compressive channel stress in Ge FinFET architecture

(2017) Kunal Sinha et al.   Journal of Computational Electronics

Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs

(2016) Guangxi Hu et al.   MICROELECTRONICS JOURNAL

FinFET and UTBB for RF SOI communication systems

(2016) Jean-Pierre Raskin   SOLID-STATE ELECTRONICS

Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate

(2014) Abhijit Biswas et al.   MICROELECTRONICS RELIABILITY

Bias and geometry optimization of FinFET for RF stability performance

(2013) K. Sivasankaran et al.   Journal of Computational Electronics

Effect of gate engineering in double-gate MOSFETs for analog/RF applications

(2012) Angsuman Sarkar et al.   MICROELECTRONICS JOURNAL

Study of potential high-kdielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage

(2011) Ghader Darbandy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Calculation of Fin width for bulk inversion in Si FinFET by applying supersymmetry

(2008) Razib Shishir et al.   Journal of Computational Electronics