4.5 Article

Observation of large intrinsic anomalous Hall conductivity in polycrystalline Mn3Sn films

Journal

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2021.110489

Keywords

Anomalous Hall effect; Topological materials; Thin films; Weyl semimetals; Berry curvature

Funding

  1. ARC Centre for Future Low Energy Electronics Technologies
  2. ARC Professional Future Fellowship [FT130100778]

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Topological antiferromagnets such as Mn3Sn thin films exhibit large anomalous Hall conductivity, weak ferromagnetic moment, and decreasing anomalous Hall resistivity and conductivity with temperature increase. Substantial negative magnetoresistance is observed for all temperatures with decreasing magnitude as temperature increases.
Topological antiferromagnets have a significant role to play in the modern day electronics and spintronics due to the presence of peculiar symmetries and magnetically driven large anomalous transport behaviour. We report the observation of anomalous Hall effect in Mn3Sn polycrystalline thin films deposited on Al2O3 substrate with a large anomalous Hall conductivity of 65 (omega cm)- 1 at 3 K. The Hall and magnetic measurements show a very small hysteresis owing to a weak ferromagnetic moment present in this material. The longitudinal resistivity decreases sufficiently for the thin films as compared to the polycrystalline bulk sample used as the target for the film deposition. The anomalous Hall resistivity and conductivity decreases almost linearly with the increase in the temperature. A negative magnetoresistance is observed for all the measured temperatures with the negative decrease in the magnitude with the increase in temperature.

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