4.6 Article

Functions of oxygen atoms in hydrogenated amorphous silicon oxide layers for rear-emitter silicon heterojunction solar cells

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SPRINGER
DOI: 10.1007/s10854-021-07315-1

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  1. National Natural Science Foundations of China [62004208, 62074153]
  2. Science and Technology Commission of Shanghai [19dz1207602, 20dz1207100]

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Replacing intrinsic hydrogenated amorphous silicon films with intrinsic hydrogenated amorphous silicon oxide films with wider band gap at the front of rear-emitter silicon heterojunction solar cells, along with modification of the microstructure of the films, led to an increase in short-circuit current density and improved efficiency. Additionally, adjustments in the carbon dioxide-to-silane flow ratio were necessary to balance out the oxygen content and maintain performance levels. Overall, these changes resulted in a more efficient solar cell with better stability in harsh environments.
Reducing the parasitic absorption of intrinsic hydrogenated amorphous silicon [a-Si:H(i)] films is crucial for enhancing the short-circuit current density (J(sc)) of silicon heterojunction (SHJ) solar cells. Herein, a-Si:H(i) films were replaced by intrinsic hydrogenated amorphous silicon oxide [a-SiOx:H(i)] films with wider band gap at the front of rear-emitter SHJ solar cells and the microstructure of a-SiOx:H(i) films was modified with the flow ratio of carbon dioxide to silane. A-SiOx:H(i) films showed lower absorption coefficients at short wavelengths and led to a 0.13 mA/cm(2) absolute increase of J(sc). Additionally, higher open-circuit voltages (V-oc) were achieved thanks to the better interface passivation and the fill factors (FF) almost kept constant due to avoiding the impediment of hole transport. However, the higher oxygen content in a-SiOx:H(i) films associated with the worse electrical performance hence carbon dioxide-to-silane flow ratio should be adjusted at a low value. Finally, a conversion efficiency (E-ff) gain of 0.12%(abs) was obtained for the optimized SHJ solar cells as a result of the improvements of both V-oc and J(sc). More importantly, a-SiOx:H(i) layer exhibited better damp-heat stability than a-Si:H(i) layer in sodium environment. This work clearly interpreted the functions of oxygen atoms in a-SiOx:H(i) films and offered a valid approach to reducing the parasitic absorption losses of SHJ solar cells.

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