Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO2 interface in N2 and N2/H2 ambient

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Title
Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO2 interface in N2 and N2/H2 ambient
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2021-12-16
DOI
10.35848/1347-4065/ac4357

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