Heavy Ion Characterization of Temporal-, Dual- and Triple Redundant Flip-Flops Across a Wide Supply Voltage Range in a 65 nm Bulk CMOS Process

Title
Heavy Ion Characterization of Temporal-, Dual- and Triple Redundant Flip-Flops Across a Wide Supply Voltage Range in a 65 nm Bulk CMOS Process
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 63, Issue 6, Pages 2962-2970
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-10-04
DOI
10.1109/tns.2016.2614781

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