A 200-GHz Power Amplifier With a Wideband Balanced Slot Power Combiner and 9.4-dBm P sat in 65-nm CMOS: Embedded Power Amplification

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Title
A 200-GHz Power Amplifier With a Wideband Balanced Slot Power Combiner and 9.4-dBm P sat in 65-nm CMOS: Embedded Power Amplification
Authors
Keywords
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Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 56, Issue 11, Pages 3318-3330
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-08-11
DOI
10.1109/jssc.2021.3091546

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